PART |
Description |
Maker |
CY62126BV CY62126BVLL-55BAI CY62126BVLL-55ZI CY621 |
64K x 16 Static RAM Memory : MicroPower SRAMs
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Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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CY62126DV30L CY62126DV30L-55ZSI CY62126DV30L-70BVI |
1-Mbit (64K x 16) Static RAM 1兆位4K的16)静态RAM Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:18-32 Memory : MicroPower SRAMs
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Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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CY7C1365C |
Memory : Sync SRAMs
|
Cypress
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CY7C1381C-117AI CY7C1383C-100BZI CY7C1383C CY7C138 |
Memory : Sync SRAMs 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
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CY7C1297A1-50AC CY7C1297A-50AC CY7C1297A-66AC GVT7 |
Memory : Sync SRAMs 64K X 18 Synchronous Burst SRAM
|
Cypress Semiconductor
|
CY7C197B-25PC CY7C197B-12VC |
Memory : Async SRAMs 256 Kb (256K x 1) Static RAM
|
Cypress Semiconductor
|
CY7C1020B CY7C1020B-12VC CY7C1020B-12ZC CY7C1020B- |
32K x 16 Static RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44 Memory : Async SRAMs
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CYPRESS SEMICONDUCTOR CORP Cypress Semiconductor, Corp. CYPRESS[Cypress Semiconductor] http://
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GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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GS816118CD-333I GS816118CD-300 GS816118CD-300I GS8 |
18Mb Burst SRAMs 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
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GS816018CT-250I GS816018CGT-250I GS816018CT-333 GS |
18Mb Burst SRAMs 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
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